Cadmium telluride thin films doped with indium: a morphological study
Identifieur interne : 000132 ( Main/Exploration ); précédent : 000131; suivant : 000133Cadmium telluride thin films doped with indium: a morphological study
Auteurs : RBID : ISTEX:10854_1995_Article_BF00190547.pdfAbstract
CdTe thin films doped with indium were studied by Scanning Electron Microscopy (SEM). Samples were prepared using Corning glass as a substrate by the Close-Space Vapour Transport with Hot Walls (CSVT-HW) technique. All the samples were prepared using 500 ‡C (Tsubs) and 600 ‡ C (TCdTe) as substrate and CdTe source temperatures, respectively. Indium (In) was introduced as a dopant by evaporation during thin-film preparation. The In source temperature was varied from 560 ‡C to 730 ‡C in order to obtain different In concentrations. The mean grain size as a function of the indium temperature and its relationship to electrical properties are analysed. By making mechanical fractures on the thin films, the lateral growth morphology and conditions of contact with the substrate were studied.
DOI: 10.1007/BF00190547
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Anguiano</name><affiliation wicri:level="1"><mods:affiliation>Instituto de Ciencia de Materiales (C.S.I.C), Campus de Universidad Autonoma de Madrid (C-3), 28049, Madrid, Spain</mods:affiliation><country xml:lang="fr">Espagne</country><wicri:regionArea>Instituto de Ciencia de Materiales (C.S.I.C), Campus de Universidad Autonoma de Madrid (C-3), 28049, Madrid</wicri:regionArea><wicri:noRegion>Madrid</wicri:noRegion></affiliation></author><author><name>M. Aguilar</name><affiliation wicri:level="1"><mods:affiliation>Instituto de Ciencia de Materiales (C.S.I.C), Campus de Universidad Autonoma de Madrid (C-3), 28049, Madrid, Spain</mods:affiliation><country xml:lang="fr">Espagne</country><wicri:regionArea>Instituto de Ciencia de Materiales (C.S.I.C), Campus de Universidad Autonoma de Madrid (C-3), 28049, Madrid</wicri:regionArea><wicri:noRegion>Madrid</wicri:noRegion></affiliation></author><author><name>R. Castro-Rodriguez</name><affiliation wicri:level="1"><mods:affiliation>Depto. de Fisica Aplicada, Cinvestav-Merida, AP 73-Cordemex, 97310, Yucatan, Mexico</mods:affiliation><country xml:lang="fr">Mexique</country><wicri:regionArea>Depto. de Fisica Aplicada, Cinvestav-Merida, AP 73-Cordemex, 97310, Yucatan</wicri:regionArea><wicri:noRegion>Yucatan</wicri:noRegion></affiliation></author><author><name>J. L. Peña</name><affiliation wicri:level="1"><mods:affiliation>Depto. de Fisica Aplicada, Cinvestav-Merida, AP 73-Cordemex, 97310, Yucatan, Mexico</mods:affiliation><country xml:lang="fr">Mexique</country><wicri:regionArea>Depto. de Fisica Aplicada, Cinvestav-Merida, AP 73-Cordemex, 97310, Yucatan</wicri:regionArea><wicri:noRegion>Yucatan</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:10854_1995_Article_BF00190547.pdf</idno><date when="1995">1995</date><idno type="doi">10.1007/BF00190547</idno><idno type="wicri:Area/Main/Corpus">000E08</idno><idno type="wicri:Area/Main/Curation">000E08</idno><idno type="wicri:Area/Main/Exploration">000132</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">CdTe thin films doped with indium were studied by Scanning Electron Microscopy (SEM). Samples were prepared using Corning glass as a substrate by the Close-Space Vapour Transport with Hot Walls (CSVT-HW) technique. All the samples were prepared using 500 ‡C (Tsubs) and 600 ‡ C (TCdTe) as substrate and CdTe source temperatures, respectively. Indium (In) was introduced as a dopant by evaporation during thin-film preparation. The In source temperature was varied from 560 ‡C to 730 ‡C in order to obtain different In concentrations. The mean grain size as a function of the indium temperature and its relationship to electrical properties are analysed. By making mechanical fractures on the thin films, the lateral growth morphology and conditions of contact with the substrate were studied.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="f2a7598f38d55f01bae7fb5a4827ed7fdcaafafb"><titleInfo lang="eng"><title>Cadmium telluride thin films doped with indium: a morphological study</title></titleInfo><name type="personal"><namePart type="given">A. I.</namePart><namePart type="family">Oliva</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Instituto de Ciencia de Materiales (C.S.I.C), Campus de Universidad Autonoma de Madrid (C-3), 28049, Madrid, Spain</affiliation></name><name type="personal"><namePart type="given">E.</namePart><namePart type="family">Anguiano</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Instituto de Ciencia de Materiales (C.S.I.C), Campus de Universidad Autonoma de Madrid (C-3), 28049, Madrid, Spain</affiliation></name><name type="personal"><namePart type="given">M.</namePart><namePart type="family">Aguilar</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Instituto de Ciencia de Materiales (C.S.I.C), Campus de Universidad Autonoma de Madrid (C-3), 28049, Madrid, Spain</affiliation></name><name type="personal"><namePart type="given">R.</namePart><namePart type="family">Castro-Rodriguez</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Depto. de Fisica Aplicada, Cinvestav-Merida, AP 73-Cordemex, 97310, Yucatan, Mexico</affiliation></name><name type="personal"><namePart type="given">J. L.</namePart><namePart type="family">Peña</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Depto. de Fisica Aplicada, Cinvestav-Merida, AP 73-Cordemex, 97310, Yucatan, Mexico</affiliation></name><typeOfResource>text</typeOfResource><genre>Papers</genre><genre>Original Paper</genre><originInfo><publisher>Kluwer Academic Publishers, Dordrecht</publisher><dateCreated encoding="w3cdtf">1994-05-10</dateCreated><dateCaptured encoding="w3cdtf">1994-07-28</dateCaptured><dateValid encoding="w3cdtf">2004-07-11</dateValid><copyrightDate encoding="w3cdtf">1995</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">CdTe thin films doped with indium were studied by Scanning Electron Microscopy (SEM). Samples were prepared using Corning glass as a substrate by the Close-Space Vapour Transport with Hot Walls (CSVT-HW) technique. All the samples were prepared using 500 ‡C (Tsubs) and 600 ‡ C (TCdTe) as substrate and CdTe source temperatures, respectively. Indium (In) was introduced as a dopant by evaporation during thin-film preparation. The In source temperature was varied from 560 ‡C to 730 ‡C in order to obtain different In concentrations. The mean grain size as a function of the indium temperature and its relationship to electrical properties are analysed. By making mechanical fractures on the thin films, the lateral growth morphology and conditions of contact with the substrate were studied.</abstract><relatedItem type="series"><titleInfo type="abbreviated"><title>J Mater Sci: Mater Electron</title></titleInfo><titleInfo><title>Journal of Materials Science: Materials in Electronics</title><partNumber>Year: 1995</partNumber><partNumber>Volume: 6</partNumber><partNumber>Number: 3</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1995-07-01</dateIssued><copyrightDate encoding="w3cdtf">1995</copyrightDate></originInfo><subject usage="primary"><topic>Engineering</topic><topic>Materials Processing, Characterization, and Design</topic><topic>Semiconductors, Materials for Electronics</topic></subject><identifier type="issn">0957-4522</identifier><identifier type="issn">Electronic: 1573-482X</identifier><identifier type="matrixNumber">10854</identifier><identifier type="local">IssueArticleCount: 11</identifier><recordInfo><recordOrigin>Chapman & Hall, 1995</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF00190547</identifier><identifier type="matrixNumber">Art6</identifier><identifier type="local">BF00190547</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>154</start><end>160</end></extent></part><recordInfo><recordOrigin>Chapman & Hall, 1995</recordOrigin><recordIdentifier>10854_1995_Article_BF00190547.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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